Friday, May 7, 2021
11:30 AM - 11:50 AM (EDT)
ALD MoS2 / MoSe2 Decorated TiO2 Nanotubes: Versatile and High Performance Heterostructures
Raul Zazpe - University of Pardubice

*Raul Zazpe1,2, Richard Krumpolec3, Jaroslav Charvot1, Hanna Sopha1,2, Jhonatan Rodriguez Pereira1,2, Filip Bureš1, Jan M. Macak1,2
1University of Pardubice, Pardubice, Czech Republic; 2Brno University of Technology, Pardubice, Czech Republic; 3Masaryk University, Brno, Czech Republic
2D semiconductor transition metal dichalcogenides (TMDs) have attracted considerable attention due to their layered structure, suitable band gap for visible light absorption, high carrier mobility, electrochemically active unsaturated edges and relatively good stability against photocorrosion. These properties point out promising for different applications including hydrogen evolution, photocatalysis and Li-ion batteries. However, their low light absorption efficiency, recombination issues of the photogenerated electron–hole pairs and slow charge transfer of the intrinsic semiconducting 2H-phase are a handicap. An efficient strategy to surpass those intrinsic limitations are hybrid nanostructures using conducting supporting materials. In this regard, anodic TiO2 nanotubes are excellent photoactive supporting material providing a high surface area, unique directionality for the charge separation, and highly effective charge collection. Accordingly, we present anodic TiO2 nanotubes homogenously decorated with MoS2 and MoSe2 nanosheets by atomic layer deposition (ALD). In particular, MoSe2 was deposited using novel (CH3Si)2Se precursor. ALD was the deposition technique of choice as it is the only one enabling conformal coating and sub-nanometer thickness control. The synthesis of the nanotubular composites, their physical and electrochemical characterization, and encouraging results in hydrogen evolution reaction (HER), photocatalysis, and Li-ion batteries will be presented and discussed.

Session Type
Atomic Layer Processing