*Harald Köstenbauer1, Dominik Lorenz1, Hennrik Schmidt2, Christian Linke1, Joerg Winkler1
1Plansee SE, Reutte, Austria; 2Plansee, Shanghai, China
Molybdenum is commonly used as reliable and well conducting material for metallization in thin film transistors. But despite its long-standing usage, well-known process integration, and high conductivity some applications e.g. high-resolution displays, might require even lower resistance metal lines in the future. Depending on process parameter and equipment used, sputtered Mo films typically yield resistivities around 11.0 µΩcm. The positive effect on film conductivity of a TiW seed layer below a Mo layer was reported in literature 20 years ago without showing any further detail. In our work we used a seedlayer of pure W or Ti below a 300nm thick Mo layer which may result in more than 30% improvement in film conductivity for W seedlayers. Within this work we used XRD and TEM to study the microstructural change between a pure Mo film and a Mo film grown on a seedlayer. It is shown that the seedlayer significantly changes the texture and domain size of the growing Molybdenum film depending on seedlayer material.