This lecture is on the use of kinetic simulation methods for simulation of low-pressure and plasma deposition processes describe low-pressure gas flows and plasma pro¬cesses. The benefit of rarefied gas flow simulation is illustrated on various practical examples such as flow conductance determination for vacuum components, evapora¬tion and magnetron sputtering. The examples further illustrate the transition between molecular and continuous flow as well as the role of non-local effects occurring at very low pressure.

In a second part, processes involving chemical reactions between gas and reactor walls are discussed. Illustrated examples include a model of hot wire CVD deposition as well as an animated hysteresis loop in a model for reactive magnetron sputtering.

In the field of plasma simulation, the role of the magnetic confinement in magnetron sputtering is shown together with dynamic plasma features in magnetron sputtering such as rotating spokes, that can be observed in simulation and experiments. Another topic will be the impact of pulse sputtering on the plasma potential and ion energy distribution function at the substrate.

The final part of the lecture shows how to combine deposition reactor modelling with atomistic film growth simulation and with fast algorithms for deposition modelling on moving 3D substrates. Such multiscale approach allows to predict deposition homoge¬neity as well as intrinsic film properties. For certain process conditions it enables to set up real-time capable digital twins, that can be used for iterative optimization or within real-time monitoring applications.