Walter Hernandez¹, Adrian Alvarez¹, Lorenzo Diaz¹, Amy Ross², Andrew Kummel^2
1RASIRC, Inc., San Diego, CA
²University of California, San Diego, San Diego, CA
This presentation outlines a thermal Atomic Layer Deposition (ALD) process for titanium nitride (TiN) that leverages anhydrous hydrazine (N_₂H_₄) as a nitrogen source to achieve low-resistivity, conformal films suitable for advanced semiconductor applications. Unlike conventional ammonia-based processes, hydrazine enables deposition at lower temperatures while maintaining excellent film quality and uniformity in high aspect ratio structures.
The process uses hydrazine in combination with TiCl_₄ and TEMATi (tetrakis(ethylmethylamino) titanium) in a plasma-free, halogen-free configuration, producing TiN films with reduced impurity levels and enhanced electrical performance. Experimental results demonstrate successful coating of high aspect ratio horizontal vias, with hydrazine contributing to improved conformality and reduced carbon contamination.
We also address safety and delivery challenges traditionally associated with hydrazine, highlighting recent innovations in purification and vapor-phase transport systems. Collaborative work with academic and industrial partners has validated hydrazine’s effectiveness across a range of substrates and deposition conditions.