Name
Comparative Study of Growth and Properties of TiO<sub>x</sub> Thin Films Deposited via Reactive DcMS and HiPIMS
Date
Monday, April 27, 2026
Time
10:50 AM - 11:10 AM
Description

Younes Lablali1, Rachid Oubaki1, Anas Ghailane2, Jones Alami1, Mohammed Makha1
1University Mohammed VI Polytechnic (UM6P), Benguerir, Morocco>
2Avaluxe Coating Technologies GmbH & Co. KG, Fürth, Germany>
In this work, TiOx thin films were successfully deposited on crystalline (100) silicon and glass substrates using reactive HiPIMS and reactive dcMS techniques at room temperature using metallic Ti target. The influence of reactive gas at different oxygen flow rates on the structural, morphological, and optical properties of TiOx coatings was examined using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and UV-visible spectroscopy, respectively. From the XRD patterns, Titania films deposited using HiPIMS reveals a structure with mixture of anatase and rutile phases, while films deposited using DcMS consisted of pure anatase structure. Using TRIM calculations, we were able to evaluate the average energy of particles reaching the growing film in both HiPIMS and DcMS to confirm the existing structures in the deposited films. Moreover, the grain size of the growing films using HiPIMS present lower values than those obtained using DcMS which were supported by the SEM images. In addition, the sputtered films using HiPIMS were smoother compared to the films obtained using DcMS. From the elemental composition results, the HiPIMS-grown films are all over-stoichiometric, while DcMS-grown films exhibit a sub-stoichiometric behavior below 14 sccm, and over-stoichiometric behavior after this value of QO2 flow rate. Optical transmittance and optical band gap of TiOx films deposited at different oxygen flow rates using HiPIMS were analysed using UV – vis spectroscopy.

Speakers
Anas Ghailane - Avaluxe Coating Technologies GmbH & Co KG