Name
Si Doping Effect on DLC Film Deposited by PECVD and Sputtering
Date
Thursday, April 30, 2026
Time
10:30 AM - 10:50 AM
Description

Gun-Hwan Lee, Korea Institute of Materials Science, Changwon, Korea
Various ceramic coatings such as CrN, TiN, TiAlN, TiCrN and DLC were used in wide range of industrial applications, as these have excellent mechanical, chemical and biological properties. These coatings were synthesized by the vapour-phase method from an arc ion plating process. PVD (Physical Vapor Deposition) or PECVD coating technologies were commonly used in carrying out ceramic coatings.
Diamond-Like Carbon (DLC) thin films have recently gained wide application in wear-resistant components across diverse fields such as medical devices, semiconductors, optics, and mechanical engineering. Their unique properties include an exceptionally low friction coefficient (below 0.1) and tunable hardness ranging from 1000 Hv to 6000 Hv, making them highly versatile for industrial use. However, practical implementation of DLC coatings has been hindered by challenges such as high internal stress and difficulties in controlling adhesion. Addressing these issues is critical for the commercialization of DLC technology.
In this study, a deposition technique was developed using Plasma Enhanced Chemical Vapor Deposition (PECVD), enabling stable growth of DLC films with thicknesses exceeding 5 μm. Additionally, silicon doping via sputtering was employed to effectively control the friction coefficient. As a result, DLC films thicker than 5 μm were successfully deposited, offering improved performance and broader applicability in wear-resistant components.

Speakers
Gun-Hwan Lee - Korea Institute of Materials Science (KIMS)