Name
C-323 Fundamentals of High Power Impulse Magnetron Sputtering (HIPIMS)
Date
Sunday, May 5, 2024
Time
9:30 AM - 5:30 PM
Description

This course is intended for engineers, technicians, students, and others interested in using high power impulse magnetron sputtering (HIPIMS) for deposition. Some basic understanding or experience with plasmas and materials is desirable but not required. The course starts with a brief introduction to plasma and sheath physics in general, as it is relevant for coatings and films. We will explain the operation and physical processes of DC magnetrons to provide the foundation for the understanding of the time-dependent processes in pulsed systems. To appreciate the effects of pulsed plasmas on coatings, we provide first a brief overview on film growth modes and the effects obtained by ion bombardment. Attention will also be paid to substrate surface modification by very energetic ions (etching) where sputtering and shallow ion implantation occur.

Equipped with these basics, we move on to the central topic of this course, high power impulse magnetron sputtering (HIPIMS). With HIPIMS we mean a pulsed sputtering process where the power density on the sputtering target is greatly enhanced (about two orders of magnitude) over the average power density. Hence, the word “impulse” is adopted to signify a low duty cycle. We will compare HIPIMS with the more conventional medium-frequency pulsed sputtering.

We will explain how the time-dependent HIPIMS discharge differs from conventional magnetron discharges. The resulting plasma is compared to plasmas of other magnetron and arc discharges.

A central part is the physics and engineering aspects of pulsed plasmas, pulsed sheaths, and pulsed substrate bias. We move on to see what kind of effects one can obtain by using pulsed plasma systems. Such effects include the increase of the degree of ionization, dissociation of the reactive gas, interface tailoring, and control of film stress and microstructure. Examples of applications of high power impulse magnetron sputtering are given.

Speakers
Arutiun Ehiasarian - Sheffield Hallam University