Martynas Audronis, Nova Fabrica Ltd., Ignalina, Lithuania
This paper introduces four state-of-the-art real-time Optical Emission Spectroscopy/Plasma Emission Monitoring (OES/PEM) innovations that are paving the way for significant industry advancements:
Long-term Optimization of Plasma-based Processes: Plasma Emission Monitoring allows for establishing optimal process working points over extended periods. This ensures consistent production of the same coating multiple times with reduced energy consumption (lower W*h/nm). The latest advancements integrate interconnection, information transparency, advanced diagnostics, AI process recognition, autonomous decision-making capabilities, and an embedded database of atomic and molecular lines.
Robust Residual and Process Gas Analysis with Self-plasma OES (SPEOS): SPEOS enables the design of rugged gas analysers based on DC/AC or ICP plasma. These low-maintenance or maintenance-free devices function as Residual Gas Analysers (RGA) and Process Gas Analysers (PGA), facilitating process gas (e.g. oxygen, nitrogen) monitoring and control. They also allow for reliable real-time detection of water or air leaks, organic substrate outgassing, and general vacuum quality and condition monitoring.
Accurate Real-time Deposition Rate Measurement with Electron Impact Emission Spectroscopy (EIES): EIES, based on broadband OES, provides accurate real-time deposition rate measurements in thermal and electron-beam evaporation systems. This novel technology exhibits reliable measurement over extended periods, environmental insensitivity, and the ability to detect multiple materials with a single detector.
In-situ Deposition Rate Measurement in Vacuum Arc Processes: Measuring deposition rates in situ has been a significant challenge in arc evaporation ion plating processes due to the lack of a reliable method. A recently developed OES-based technology enables accurate real-time deposition rate measurement in arc evaporation ion plating process chambers, producing layers over 10 microns thick.