Name
Fast Kinetic Modeling of Magnetron Sputtering
Date
Monday, May 6, 2024
Time
12:50 PM - 1:10 PM
Description

Daniel S. Main1, Thomas G. Jenkins1, Joseph G. Theis2, Gregory R. Werner2, Scott E. Kruger1, JR Cary1,2
1Tech-X Corporation, Boulder, CO
2University of Colorado, Boulder, Boulder, CO
Magnetron sputtering devices have a wide range of uses in the coatings industry, where they are used for optical coatings, metallization in integrated circuits, and coatings for wear resistance. Numerical simulations can aid in the design of such systems, as computation can allow one to predict the figures of merit, eliminating the need to test each conceived configuration on the path to the final design. Such figures of merit include the uniformity and extent of the distribution of sputtered material, the power consumption of the system, and the erosion of the cathode. Such computations must be self-consistent and kinetic, i.e., they must follow particle trajectories, since fluid approximations make simplifying assumptions that may not be valid (especially at low pressure) and only a kinetic approach can properly account for the critical physics, including the energy-angle distribution of the impacting sputterers and the resulting distribution. The Particle-In-Cell, Monte Carlo Collision (PIC-MCC method) is ideal for this, as it can properly account for the above physics as well as the physics involved in plasma creation, electron trapping by the magnetic field, and even dynamics that occurs in High Power Impulse Magnetron Sputtering (HIPIMS). Unfortunately, these calculations can take significant computing time, as the time scales for relaxation to steady-state are long compared with plasma processes. This talk presents computations using multiple techniques to speed up these calculations. The methods include using a circuit model that allows one to rapidly get to the final state, steady-state relaunch, where the results of one simulation that has reached steady-state are used to initialize another, and physics minimization, where initial analysis using a global model minimizes the number of included collisional processes. Results are compared with those available in the literature.

Speakers
Daniel Main - Tech-X Corporation