Chi-Ya Hsia, Ping-Yen Hsieh, Ying-Hung Chen, Ju-Liang He, Feng Chia University, Taiwan
With the demand for high-speed and miniaturized high-power electronic devices, effective heat dissipation is facing a considerable challenge, which renders the heterogrowth of graphene film on semiconductor materials needed. By taking advantage of high ionization rates and high ion bombardment energy, our previous study successfully used high power impulse magnetron sputtering (HiPIMS) to grow graphene film on copper substrate with a multiplex layer architecture, containing in-plane-oriented multilayer graphene structure and the following out-of-plane-oriented turbostratic graphene structure. Such unique HiPIMS-graphene architecture provides a comprehensive thermal conduction route, reaching 1.5 times thermal diffusivity of the bare copper foil. Herein, an approach to heterolytically grown HiPIMS-graphene film on silicon substrate is demonstrated. Further, this study also proposed the incorporation of copper during HiPIMS-graphene growth to form periodic graphene/Cu (G/Cu) stacking structure, where each Cu layer serves to catalyze the successive graphene layer growth and ultimately the G/Cu structure enhances the heat spreading ability of Si substrate. The mechanism of such heterogrowth of HiPIMS-graphene film on silicon substrate and the effect of the incorporating copper layer on the thermal diffusivity were discussed in this report.