Name
Optimizing Precursor Utilization for Spatial ALD in High Surface Area Substrates
Date
Monday, May 6, 2024
Time
4:50 PM - 5:10 PM
Description

Joost van Himste1, Paul Poodt1,2
1SparkNano B.V., Eindhoven, The Netherlands
2,Eindhoven University of Technology, Eindhoven, The Netherlands
Atomic Layer Deposition is well known for its ability to deposit thin films inside high surface area and porous substrates, with precise control of the step coverage and thickness. For these reasons, the use of ALD for new applications is being developed, where this precise control of step coverage and thickness is essential. Examples include the deposition of precious metal electrocatalysts on high surface area catalyst supports for water electrolysis and fuel cells, and the deposition of very thin passivation layers inside Li-ion battery anodes and cathodes. A challenge is that these applications require a high deposition rate and high throughput way of doing ALD, often in a roll-to-roll mode, for which Spatial ALD can be the solution. Using the precursor dose to control the step coverage and deposition rate inside porous substrates has been widely reported on in literature. The simplest way to increase the deposition rate is by increasing the partial pressure of the precursor. However, next to practical limits in precursor volatility, using high precursor partial pressures can lead to very low precursor utilization rates. With precursor prices ranging from a few $/gram to 100’s of $/gram, low precursor efficiencies are not feasible for most applications.
Here, we will show the results on modeling and experimental work on optimizing the precursor utilization efficiency during Spatial ALD on a variety of porous substrates. To objective is to minimize the precursor mass flow (e.g. in grams/hr) while ensuring a high enough precursor dose to realize the desired step coverage. By combining experiments and modeling on gas flows, precursor diffusion and surface reactions we can estimate optimized process conditions as a function of aspect ratio, surface area, required throughput, temperature and pressure. We will show that by carefully optimizing the precursor partial pressure and mass flow, precursor utilization efficiencies >90% are possible.
In cases where these high efficiencies are not attainable, or in case of very expensive precursors (e.g. containing precious metals), we have investigated the possibility to reclaim unreacted precursor for recycling. We will show results on precursor reclaim experiments, showing that reclaim efficiencies of up to 90% are feasible. By combining accurate process optimization and precursor reclaim, it is possible to perform ALD with extremely low precursor waste, which is an important enabler for high throughput and low cost Spatial ALD for a range of existing and new applications.

Speakers
Paul Poodt - SparkNano