Tehere Hemati, Gang Yang, Binbin Weng, Srujana Prayakarao, University of Oklahoma, Norman, OK
Developing precise Lead-Selenide (PbSe) gratings with narrow slots is essential for the advancement of mid-infrared (MIR) technologies used in spectroscopy, thermal imaging, and environmental sensing. A major hurdle in fabricating these components is the tendency for increased irregularities and reactive ion etching (RIE) delays in the etched profiles as the slot width becomes smaller. This talk identifies the accumulation of charge on non-conductive photoresist as the primary source of these irregularities. By applying a conductive copper layer, we can neutralize this charge, allowing for the successful etching of gratings with significantly enhanced profiles and slot widths reaching as low as 0.7 μm. This breakthrough not only boosts the sensitivity and resolution of MIR devices but also paves the way for novel applications in areas such as security and healthcare.