Steve Simons, Manitou Systems, Inc.
The flat Induction Coupled Plasma (ICP) source design has been used in semiconductor wafer etch tools for many years. This newly introduced version is designed to mount internally in a multi-position deposition system alongside traditional magnetron sputter cathodes. Its plasma performance is optimized using RF conductive magnetics to intensify, distribute and control the discharge over a defined area. The standard model operates at 13.56 MHz to enable easy system integration. The advanced version operates at 81 MHz producing a denser plasma discharge. Applications include substrate surface conditioning, co-deposition and chamber conditioning.